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HGTP5N120BND Images
- Manufacturer: onsemi (ON)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-220-3
- Description: IGBT 1200V 21A 167W TO220AB
- COMPETITIVE PRICE and DELIVERY TIME
- Order with confidence, there are no lead times for in-stock products.
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HGTP5N120BND Specifications:
- MfrPart.: HGTP5N120BND
- Mfr: onsemi
- Description: IGBT 1200V 21A 167W TO220AB
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: -
- PartStatus: Not For New Designs
- IGBTType: NPT
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 21 A
- Current-CollectorPulsed(Icm): 40 A
- Vce(on)(Max)@VgeIc: 2.7V @ 15V, 5A
- Power-Max: 167 W
- SwitchingEnergy: 450µJ (on), 390µJ (off)
- InputType: Standard
- GateCharge: 53 nC
- Td(on/off)@25°C: 22ns/160ns
- TestCondition: 960V, 5A, 25Ohm, 15V
- ReverseRecoveryTime(trr): 65 ns
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-220-3
- HGTP5N120BND onsemi (ON), IGBT 1200V 21A 167W TO220AB, Discrete Semiconductor Products~Transistors - IGBTs - Single
HGTP5N120BND, onsemi authentic parts in stock from onsemi (ON) authorized distributors, order today, can ship immediately.
onsemi (ON) Authorized Distributor | NHE is dedicated to providing first-quality, genuine onsemi components.