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HGTD1N120BNS9A onsemi IGBT 1200V 5.3A 60W TO252AA
HGTD1N120BNS9A Images
HGTD1N120BNS9A Images
  • Manufacturer: onsemi (ON)
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Description: IGBT 1200V 5.3A 60W TO252AA
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Download Datasheet (PDF)
HGTD1N120BNS9A Datasheet
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HGTD1N120BNS9A Specifications:
  • MfrPart.: HGTD1N120BNS9A
  • Mfr: onsemi
  • Description: IGBT 1200V 5.3A 60W TO252AA
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • IGBTType: NPT
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 5.3 A
  • Current-CollectorPulsed(Icm): 6 A
  • Vce(on)(Max)@VgeIc: 2.9V @ 15V, 1A
  • Power-Max: 60 W
  • SwitchingEnergy: 70µJ (on), 90µJ (off)
  • InputType: Standard
  • GateCharge: 14 nC
  • Td(on/off)@25°C: 15ns/67ns
  • TestCondition: 960V, 1A, 82Ohm, 15V
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • HGTD1N120BNS9A onsemi (ON), IGBT 1200V 5.3A 60W TO252AA, Discrete Semiconductor Products~Transistors - IGBTs - Single
HGTD1N120BNS9A, onsemi authentic parts in stock from onsemi (ON) authorized distributors, order today, can ship immediately.
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