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HGT1S10N120BNST Images
- Manufacturer: onsemi (ON)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Description: IGBT 1200V 35A 298W TO263AB
- COMPETITIVE PRICE and DELIVERY TIME
- Order with confidence, there are no lead times for in-stock products.
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HGT1S10N120BNST Specifications:
- MfrPart.: HGT1S10N120BNST
- Mfr: onsemi
- Description: IGBT 1200V 35A 298W TO263AB
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: -
- PartStatus: Active
- IGBTType: NPT
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 35 A
- Current-CollectorPulsed(Icm): 80 A
- Vce(on)(Max)@VgeIc: 2.7V @ 15V, 10A
- Power-Max: 298 W
- SwitchingEnergy: 320µJ (on), 800µJ (off)
- InputType: Standard
- GateCharge: 100 nC
- Td(on/off)@25°C: 23ns/165ns
- TestCondition: 960V, 10A, 10Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- HGT1S10N120BNST onsemi (ON), IGBT 1200V 35A 298W TO263AB, Discrete Semiconductor Products~Transistors - IGBTs - Single
HGT1S10N120BNST, onsemi authentic parts in stock from onsemi (ON) authorized distributors, order today, can ship immediately.
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